A material that could enable faster memory chips and more efficient batteries can switch between high and low ionic conductivity states much faster than previously thought, SLAC and Stanford researchers have determined. The key is to use extremely small chunks of it.
Menlo Park, Calif. — Researchers using the Linac Coherent Light Source (LCLS) at the U.S. Department of Energy’s (DOE) SLAC National Accelerator Laboratory have found a way to strip most of the electrons from xenon atoms, creating a “supercharged,” strongly positive state at energies previously thought too low.
Scientists have found a way to distort the atomic arrangement and change the magnetic properties of an important class of electronic materials with ultra-short pulses of terahertz (mid-infrared) laser light without heating the material up. While the achievement is currently of purely scientific interest, the researchers say this new approach control could ultimately lead to extremely fast, low-energy, non-volatile computer memory chips or data-switching devices.